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Lattice location of implanted Ag in Si
The lattice location of implanted silver in Si was studied by means of the emission channeling technique. Following 60 keV room temperature implantation of radioactive $^{111}$Ag at a dose of 2-3 $\times 10^{12}$ cm$^{-2}$, we identify around 30% of Ag on near-substitutional sites (around 0.45 from...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-583X(01)01191-0 http://cds.cern.ch/record/638441 |