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Determination of Effective Trapping Times for Electrons and Holes in Irradiated Silicon
A set of standard and oxygenated silicon diodes with different resistivities (1 kOhm cm and 15 kOhm cm) was irradiated with neutrons to fluences up to 2*10^{14} cm^{-2} 1 MeV neutron NIEL equivalent. After beneficial annealing the signal response from the diodes was studied using TCT (transient curr...
| Autores principales: | , , , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/684101 |