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Determination of Effective Trapping Times for Electrons and Holes in Irradiated Silicon

A set of standard and oxygenated silicon diodes with different resistivities (1 kOhm cm and 15 kOhm cm) was irradiated with neutrons to fluences up to 2*10^{14} cm^{-2} 1 MeV neutron NIEL equivalent. After beneficial annealing the signal response from the diodes was studied using TCT (transient curr...

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Detalles Bibliográficos
Autores principales:	Kramberger, G, Cindro, V, Mandic, I, Mikuz, M, Zavrtanik, M
Lenguaje:	eng
Publicado:	2000
Materias:	Detectors and Experimental Techniques
Acceso en línea:	http://cds.cern.ch/record/684101

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