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Lorentz angle variation with electric field for ATLAS silicon detectors
The material reported in this note has been presented at the Inner Detector general meeting during the February 2001 ATLAS week. Author from INFN and University of Milan. Lorentz angle in silicon detectors is computed from drift properties of charge carriers. It is found to be a strongly varying fun...
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| Lenguaje: | eng |
| Publicado: |
2001
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| Acceso en línea: | http://cds.cern.ch/record/684187 |