Lorentz angle variation with electric field for ATLAS silicon detectors

The material reported in this note has been presented at the Inner Detector general meeting during the February 2001 ATLAS week. Author from INFN and University of Milan. Lorentz angle in silicon detectors is computed from drift properties of charge carriers. It is found to be a strongly varying function of electric field. From this model, the Lorentz angle for ATLAS silicon detectors (SCT and Pixel) is computed. It results to be a function of applied bias and sensor thickness. Some considerations are made about the effect of Lorentz angle variation on spatial resolution and alignment.