Lorentz angle variation with electric field for ATLAS silicon detectors

The material reported in this note has been presented at the Inner Detector general meeting during the February 2001 ATLAS week. Author from INFN and University of Milan. Lorentz angle in silicon detectors is computed from drift properties of charge carriers. It is found to be a strongly varying fun...

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Autor principal: Lari, T
Lenguaje:eng
Publicado: 2001
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/684187
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author Lari, T
author_facet Lari, T
author_sort Lari, T
collection CERN
description The material reported in this note has been presented at the Inner Detector general meeting during the February 2001 ATLAS week. Author from INFN and University of Milan. Lorentz angle in silicon detectors is computed from drift properties of charge carriers. It is found to be a strongly varying function of electric field. From this model, the Lorentz angle for ATLAS silicon detectors (SCT and Pixel) is computed. It results to be a function of applied bias and sensor thickness. Some considerations are made about the effect of Lorentz angle variation on spatial resolution and alignment.
id cern-684187
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2001
record_format invenio
spelling cern-6841872019-09-30T06:29:59Zhttp://cds.cern.ch/record/684187engLari, TLorentz angle variation with electric field for ATLAS silicon detectorsDetectors and Experimental TechniquesThe material reported in this note has been presented at the Inner Detector general meeting during the February 2001 ATLAS week. Author from INFN and University of Milan. Lorentz angle in silicon detectors is computed from drift properties of charge carriers. It is found to be a strongly varying function of electric field. From this model, the Lorentz angle for ATLAS silicon detectors (SCT and Pixel) is computed. It results to be a function of applied bias and sensor thickness. Some considerations are made about the effect of Lorentz angle variation on spatial resolution and alignment.ATL-INDET-2001-004oai:cds.cern.ch:6841872001-04-11
spellingShingle Detectors and Experimental Techniques
Lari, T
Lorentz angle variation with electric field for ATLAS silicon detectors
title Lorentz angle variation with electric field for ATLAS silicon detectors
title_full Lorentz angle variation with electric field for ATLAS silicon detectors
title_fullStr Lorentz angle variation with electric field for ATLAS silicon detectors
title_full_unstemmed Lorentz angle variation with electric field for ATLAS silicon detectors
title_short Lorentz angle variation with electric field for ATLAS silicon detectors
title_sort lorentz angle variation with electric field for atlas silicon detectors
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/684187
work_keys_str_mv AT larit lorentzanglevariationwithelectricfieldforatlassilicondetectors

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