Proton Induced Radiation Effects on a Xilinx FPGA and Estimates of SEE in the ATLAS Environment

We have measured the proton induced single-event upset cross-section of a Xilinx SRAM-based FPGA. Six XC4036XLA parts were irradiated with protons of energy between 18~MeV and 105~MeV using the Proton Irradiation Facility at TRIUMF. The saturation cross-section and threshold energy were determined to be (2.7~$\pm$~0.2)$\times$10$^{-9}$~upset$\cdot$cm$^2$/device and (22~$\pm$~2)~MeV, respectively. Based on the behaviour of our test circuit, we have estimated the single-event upset cross-section for the circuit logic and the configuration switches of the FPGA separately. The upset cross-section was used to estimate the single-event upset rate in the ATLAS environment. An estimate of the proton induced latch-up rate in ATLAS was also made.