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Temperature Dependence of Reverse Annealing in Bulk Damaged Silicon

Detalles Bibliográficos
Autores principales: Beck, G, Gibson, M, Pritchard, T W, Robinson, D
Lenguaje:eng
Publicado: 1994
Materias:
Acceso en línea:http://cds.cern.ch/record/685912
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author Beck, G
Gibson, M
Pritchard, T W
Robinson, D
author_facet Beck, G
Gibson, M
Pritchard, T W
Robinson, D
author_sort Beck, G
collection CERN
id cern-685912
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1994
record_format invenio
spelling cern-6859122019-09-30T06:29:59Zhttp://cds.cern.ch/record/685912engBeck, GGibson, MPritchard, T WRobinson, DTemperature Dependence of Reverse Annealing in Bulk Damaged SiliconDetectors and Experimental TechniquesATL-INDET-94-071ATL-I-PN-71oai:cds.cern.ch:6859121994-11-16
spellingShingle Detectors and Experimental Techniques
Beck, G
Gibson, M
Pritchard, T W
Robinson, D
Temperature Dependence of Reverse Annealing in Bulk Damaged Silicon
title Temperature Dependence of Reverse Annealing in Bulk Damaged Silicon
title_full Temperature Dependence of Reverse Annealing in Bulk Damaged Silicon
title_fullStr Temperature Dependence of Reverse Annealing in Bulk Damaged Silicon
title_full_unstemmed Temperature Dependence of Reverse Annealing in Bulk Damaged Silicon
title_short Temperature Dependence of Reverse Annealing in Bulk Damaged Silicon
title_sort temperature dependence of reverse annealing in bulk damaged silicon
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/685912
work_keys_str_mv AT beckg temperaturedependenceofreverseannealinginbulkdamagedsilicon
AT gibsonm temperaturedependenceofreverseannealinginbulkdamagedsilicon
AT pritchardtw temperaturedependenceofreverseannealinginbulkdamagedsilicon
AT robinsond temperaturedependenceofreverseannealinginbulkdamagedsilicon