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TCAD-Based Analysis of Radiation-Hardness in Silicon Detectors
The application of a general-purpose device-simulator to the analysis of silicon microstrip radiation detector is described. Physical models include charge-collection dynamics, as well as radiation-induced deep-level recombination centers. Realistic description of multiple-strip devices can be accou...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
1998
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/687013 |