TCAD-Based Analysis of Radiation-Hardness in Silicon Detectors

The application of a general-purpose device-simulator to the analysis of silicon microstrip radiation detector is described. Physical models include charge-collection dynamics, as well as radiation-induced deep-level recombination centers. Realistic description of multiple-strip devices can be accou...

Descripción completa

Detalles Bibliográficos
Autores principales: Passeri, D, Baroncini, M, Bilei, G M, Checcucci, B, Ciampolini, P, Fiandrini, E, Santocchia, A
Lenguaje:eng
Publicado: 1998
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/687013
_version_ 1780901670710935552
author Passeri, D
Baroncini, M
Bilei, G M
Checcucci, B
Ciampolini, P
Fiandrini, E
Santocchia, A
author_facet Passeri, D
Baroncini, M
Bilei, G M
Checcucci, B
Ciampolini, P
Fiandrini, E
Santocchia, A
author_sort Passeri, D
collection CERN
description The application of a general-purpose device-simulator to the analysis of silicon microstrip radiation detector is described. Physical models include charge-collection dynamics, as well as radiation-induced deep-level recombination centers. Realistic description of multiple-strip devices can be accounted for. To allow for validation of the analysis tool, actual detectors have been measured, before and after being irradiated with neutrons. Simulation predictions agree well with experiments. Limitations of the adopted model are discussed, with reference to simulation-based comparison with higher-order models.
id cern-687013
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1998
record_format invenio
spelling cern-6870132019-09-30T06:29:59Zhttp://cds.cern.ch/record/687013engPasseri, DBaroncini, MBilei, G MCheccucci, BCiampolini, PFiandrini, ESantocchia, ATCAD-Based Analysis of Radiation-Hardness in Silicon DetectorsDetectors and Experimental TechniquesThe application of a general-purpose device-simulator to the analysis of silicon microstrip radiation detector is described. Physical models include charge-collection dynamics, as well as radiation-induced deep-level recombination centers. Realistic description of multiple-strip devices can be accounted for. To allow for validation of the analysis tool, actual detectors have been measured, before and after being irradiated with neutrons. Simulation predictions agree well with experiments. Limitations of the adopted model are discussed, with reference to simulation-based comparison with higher-order models.CMS-CR-1998-011oai:cds.cern.ch:6870131998-04-30
spellingShingle Detectors and Experimental Techniques
Passeri, D
Baroncini, M
Bilei, G M
Checcucci, B
Ciampolini, P
Fiandrini, E
Santocchia, A
TCAD-Based Analysis of Radiation-Hardness in Silicon Detectors
title TCAD-Based Analysis of Radiation-Hardness in Silicon Detectors
title_full TCAD-Based Analysis of Radiation-Hardness in Silicon Detectors
title_fullStr TCAD-Based Analysis of Radiation-Hardness in Silicon Detectors
title_full_unstemmed TCAD-Based Analysis of Radiation-Hardness in Silicon Detectors
title_short TCAD-Based Analysis of Radiation-Hardness in Silicon Detectors
title_sort tcad-based analysis of radiation-hardness in silicon detectors
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/687013
work_keys_str_mv AT passerid tcadbasedanalysisofradiationhardnessinsilicondetectors
AT baroncinim tcadbasedanalysisofradiationhardnessinsilicondetectors
AT bileigm tcadbasedanalysisofradiationhardnessinsilicondetectors
AT checcuccib tcadbasedanalysisofradiationhardnessinsilicondetectors
AT ciampolinip tcadbasedanalysisofradiationhardnessinsilicondetectors
AT fiandrinie tcadbasedanalysisofradiationhardnessinsilicondetectors
AT santocchiaa tcadbasedanalysisofradiationhardnessinsilicondetectors

Ejemplares similares