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TCAD-Based Analysis of Radiation-Hardness in Silicon Detectors

The application of a general-purpose device-simulator to the analysis of silicon microstrip radiation detector is described. Physical models include charge-collection dynamics, as well as radiation-induced deep-level recombination centers. Realistic description of multiple-strip devices can be accou...

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Detalles Bibliográficos
Autores principales:	Passeri, D, Baroncini, M, Bilei, G M, Checcucci, B, Ciampolini, P, Fiandrini, E, Santocchia, A
Lenguaje:	eng
Publicado:	1998
Materias:	Detectors and Experimental Techniques
Acceso en línea:	http://cds.cern.ch/record/687013

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