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Depth Profile of Signal Charge Collected in Heavily Irradiated Silicon Pixels
The response of heavily irradiated Silicon n-pixels to minimum ionizing particles has been measured using pions traversing rows of pixels at a grazing angle of 8 degrees. With this method the charge collection efficiency can be determined as a function of detector depth. The results indicate that ch...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
1997
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/687041 |