Depth Profile of Signal Charge Collected in Heavily Irradiated Silicon Pixels

The response of heavily irradiated Silicon n-pixels to minimum ionizing particles has been measured using pions traversing rows of pixels at a grazing angle of 8 degrees. With this method the charge collection efficiency can be determined as a function of detector depth. The results indicate that ch...

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Detalles Bibliográficos
Autores principales: Henrich, Beat, Bertl, Willi, Gabathuler, Kurt, Horisberger, Roland
Lenguaje:eng
Publicado: 1997
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/687041
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author Henrich, Beat
Bertl, Willi
Gabathuler, Kurt
Horisberger, Roland
author_facet Henrich, Beat
Bertl, Willi
Gabathuler, Kurt
Horisberger, Roland
author_sort Henrich, Beat
collection CERN
description The response of heavily irradiated Silicon n-pixels to minimum ionizing particles has been measured using pions traversing rows of pixels at a grazing angle of 8 degrees. With this method the charge collection efficiency can be determined as a function of detector depth. The results indicate that charge trapping effects can be kept at an acceptable level by running the detectors at bias voltages of a few hundred Volts. For pixels irradiated with 6.1 E14 pions/cm2 we find signals of 9700 e- for a bias of 300 Volts.
id cern-687041
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1997
record_format invenio
spelling cern-6870412019-09-30T06:29:59Zhttp://cds.cern.ch/record/687041engHenrich, BeatBertl, WilliGabathuler, KurtHorisberger, RolandDepth Profile of Signal Charge Collected in Heavily Irradiated Silicon PixelsDetectors and Experimental TechniquesThe response of heavily irradiated Silicon n-pixels to minimum ionizing particles has been measured using pions traversing rows of pixels at a grazing angle of 8 degrees. With this method the charge collection efficiency can be determined as a function of detector depth. The results indicate that charge trapping effects can be kept at an acceptable level by running the detectors at bias voltages of a few hundred Volts. For pixels irradiated with 6.1 E14 pions/cm2 we find signals of 9700 e- for a bias of 300 Volts.CMS-NOTE-1997-021oai:cds.cern.ch:6870411997-04-17
spellingShingle Detectors and Experimental Techniques
Henrich, Beat
Bertl, Willi
Gabathuler, Kurt
Horisberger, Roland
Depth Profile of Signal Charge Collected in Heavily Irradiated Silicon Pixels
title Depth Profile of Signal Charge Collected in Heavily Irradiated Silicon Pixels
title_full Depth Profile of Signal Charge Collected in Heavily Irradiated Silicon Pixels
title_fullStr Depth Profile of Signal Charge Collected in Heavily Irradiated Silicon Pixels
title_full_unstemmed Depth Profile of Signal Charge Collected in Heavily Irradiated Silicon Pixels
title_short Depth Profile of Signal Charge Collected in Heavily Irradiated Silicon Pixels
title_sort depth profile of signal charge collected in heavily irradiated silicon pixels
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/687041
work_keys_str_mv AT henrichbeat depthprofileofsignalchargecollectedinheavilyirradiatedsiliconpixels
AT bertlwilli depthprofileofsignalchargecollectedinheavilyirradiatedsiliconpixels
AT gabathulerkurt depthprofileofsignalchargecollectedinheavilyirradiatedsiliconpixels
AT horisbergerroland depthprofileofsignalchargecollectedinheavilyirradiatedsiliconpixels

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