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A Device Model Simulation of Neutron Radiation Effects in Avalanche Photodiodes
A one-dimensional ( 1-D) steady state drift-diffusion model that incorporates impact ionisation has been developed for the simulation of avalanche photodiodes. The model uses finite difference analysis to solve the time-independent semiconductor equations across a user specified structure. The model...
| Autores principales: | , , |
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| Lenguaje: | eng |
| Publicado: |
1999
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/687082 |