A Device Model Simulation of Neutron Radiation Effects in Avalanche Photodiodes

A one-dimensional ( 1-D) steady state drift-diffusion model that incorporates impact ionisation has been developed for the simulation of avalanche photodiodes. The model uses finite difference analysis to solve the time-independent semiconductor equations across a user specified structure. The model...

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Detalles Bibliográficos
Autores principales: Osborne, Mark, Hobson, Peter R, Watts, Steve J
Lenguaje:eng
Publicado: 1999
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/687082
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author Osborne, Mark
Hobson, Peter R
Watts, Steve J
author_facet Osborne, Mark
Hobson, Peter R
Watts, Steve J
author_sort Osborne, Mark
collection CERN
description A one-dimensional ( 1-D) steady state drift-diffusion model that incorporates impact ionisation has been developed for the simulation of avalanche photodiodes. The model uses finite difference analysis to solve the time-independent semiconductor equations across a user specified structure. The model includes DC illumination, allowing wavelength dependent effects to be modelled. The effect of neutron radiation damage is included via the introduction of deep acceptor levels subject to Shockley-Read-Hall statistics. Preliminary analysis of an EG&G reverse reach through APD structure has been performed.
id cern-687082
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1999
record_format invenio
spelling cern-6870822019-09-30T06:29:59Zhttp://cds.cern.ch/record/687082engOsborne, MarkHobson, Peter RWatts, Steve JA Device Model Simulation of Neutron Radiation Effects in Avalanche PhotodiodesDetectors and Experimental TechniquesA one-dimensional ( 1-D) steady state drift-diffusion model that incorporates impact ionisation has been developed for the simulation of avalanche photodiodes. The model uses finite difference analysis to solve the time-independent semiconductor equations across a user specified structure. The model includes DC illumination, allowing wavelength dependent effects to be modelled. The effect of neutron radiation damage is included via the introduction of deep acceptor levels subject to Shockley-Read-Hall statistics. Preliminary analysis of an EG&G reverse reach through APD structure has been performed.CMS-NOTE-1999-005oai:cds.cern.ch:6870821999-02-08
spellingShingle Detectors and Experimental Techniques
Osborne, Mark
Hobson, Peter R
Watts, Steve J
A Device Model Simulation of Neutron Radiation Effects in Avalanche Photodiodes
title A Device Model Simulation of Neutron Radiation Effects in Avalanche Photodiodes
title_full A Device Model Simulation of Neutron Radiation Effects in Avalanche Photodiodes
title_fullStr A Device Model Simulation of Neutron Radiation Effects in Avalanche Photodiodes
title_full_unstemmed A Device Model Simulation of Neutron Radiation Effects in Avalanche Photodiodes
title_short A Device Model Simulation of Neutron Radiation Effects in Avalanche Photodiodes
title_sort device model simulation of neutron radiation effects in avalanche photodiodes
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/687082
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AT hobsonpeterr adevicemodelsimulationofneutronradiationeffectsinavalanchephotodiodes
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