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Physical modeling of silicon microstrip detectors: influence of the electrode geometry on critical electric fields.
In this paper, a computer-based analysis of AC-coupled silicon microstrip detectors is presented. The study aims at investigating the main geometrical parameters responsible for potentially critical effects, such as early micro-discharges and breakdown phenomena. The adoption of CAD tools allows for...
| Autores principales: | , , , |
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| Lenguaje: | eng |
| Publicado: |
1999
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/687177 |