Physical modeling of silicon microstrip detectors: influence of the electrode geometry on critical electric fields.

In this paper, a computer-based analysis of AC-coupled silicon microstrip detectors is presented. The study aims at investigating the main geometrical parameters responsible for potentially critical effects, such as early micro-discharges and breakdown phenomena. The adoption of CAD tools allows for...

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Detalles Bibliográficos
Autores principales: Passeri, D, Bilei, G M, Ciampolini, P, Scorzoni, A
Lenguaje:eng
Publicado: 1999
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/687177
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author Passeri, D
Bilei, G M
Ciampolini, P
Scorzoni, A
author_facet Passeri, D
Bilei, G M
Ciampolini, P
Scorzoni, A
author_sort Passeri, D
collection CERN
description In this paper, a computer-based analysis of AC-coupled silicon microstrip detectors is presented. The study aims at investigating the main geometrical parameters responsible for potentially critical effects, such as early micro-discharges and breakdown phenomena. The adoption of CAD tools allows for evaluating the actual field distribution within the device, and makes it possible to identify critical regions. The adoption of overhanging metal strips is shown to have a positive impact on the electric field distribution, reducing corner effects and thus minimizing breakdown risks.
id cern-687177
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1999
record_format invenio
spelling cern-6871772019-09-30T06:29:59Zhttp://cds.cern.ch/record/687177engPasseri, DBilei, G MCiampolini, PScorzoni, APhysical modeling of silicon microstrip detectors: influence of the electrode geometry on critical electric fields.Detectors and Experimental TechniquesIn this paper, a computer-based analysis of AC-coupled silicon microstrip detectors is presented. The study aims at investigating the main geometrical parameters responsible for potentially critical effects, such as early micro-discharges and breakdown phenomena. The adoption of CAD tools allows for evaluating the actual field distribution within the device, and makes it possible to identify critical regions. The adoption of overhanging metal strips is shown to have a positive impact on the electric field distribution, reducing corner effects and thus minimizing breakdown risks.CMS-CR-1999-030oai:cds.cern.ch:6871771999-11-01
spellingShingle Detectors and Experimental Techniques
Passeri, D
Bilei, G M
Ciampolini, P
Scorzoni, A
Physical modeling of silicon microstrip detectors: influence of the electrode geometry on critical electric fields.
title Physical modeling of silicon microstrip detectors: influence of the electrode geometry on critical electric fields.
title_full Physical modeling of silicon microstrip detectors: influence of the electrode geometry on critical electric fields.
title_fullStr Physical modeling of silicon microstrip detectors: influence of the electrode geometry on critical electric fields.
title_full_unstemmed Physical modeling of silicon microstrip detectors: influence of the electrode geometry on critical electric fields.
title_short Physical modeling of silicon microstrip detectors: influence of the electrode geometry on critical electric fields.
title_sort physical modeling of silicon microstrip detectors: influence of the electrode geometry on critical electric fields.
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/687177
work_keys_str_mv AT passerid physicalmodelingofsiliconmicrostripdetectorsinfluenceoftheelectrodegeometryoncriticalelectricfields
AT bileigm physicalmodelingofsiliconmicrostripdetectorsinfluenceoftheelectrodegeometryoncriticalelectricfields
AT ciampolinip physicalmodelingofsiliconmicrostripdetectorsinfluenceoftheelectrodegeometryoncriticalelectricfields
AT scorzonia physicalmodelingofsiliconmicrostripdetectorsinfluenceoftheelectrodegeometryoncriticalelectricfields

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