Physical modeling of silicon microstrip detectors: influence of the electrode geometry on critical electric fields.

In this paper, a computer-based analysis of AC-coupled silicon microstrip detectors is presented. The study aims at investigating the main geometrical parameters responsible for potentially critical effects, such as early micro-discharges and breakdown phenomena. The adoption of CAD tools allows for...

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Detalles Bibliográficos
Autores principales: Passeri, D, Bilei, G M, Ciampolini, P, Scorzoni, A
Lenguaje:eng
Publicado: 1999
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/687177

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