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Characterization of neutron irradiated, low-resistivity silicon detectors
A complete electrical characterization of silicon detectors fabricated using low-( ~ 1.5 kOhm cm) and high-( > 5 kOhm cm) resistivity substrates has been carried out. Measurements have been performed before and after neutron irradiation at several different fluences, up to 3x10^14 n cm^-2 ( 1...
| Autores principales: | , , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2000
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/687225 |