Characterization of neutron irradiated, low-resistivity silicon detectors

A complete electrical characterization of silicon detectors fabricated using low-( ~ 1.5 kOhm cm) and high-( > 5 kOhm cm) resistivity substrates has been carried out. Measurements have been performed before and after neutron irradiation at several different fluences, up to 3x10^14 n cm^-2 ( 1 MeV eq.). Experimental results have been compared with CAD based simulations. A good agreement has been found, thus validating the CAD model predictions. The adoption of low resistivity devices appears to have some definite advantages in terms of depletion voltage, which in turn results in better interstrip resistance.