Cargando…
Pion Induced Single Event Upset in the CMS Pixel Detector Readout
Single event upset probabilities for 200 MeV pions are compared for SRAM devices implemented in two different radiation hard SOI technbologies
Autores principales: | , , , |
---|---|
Lenguaje: | eng |
Publicado: |
2000
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/687247 |