Pion Induced Single Event Upset in the CMS Pixel Detector Readout

Single event upset probabilities for 200 MeV pions are compared for SRAM devices implemented in two different radiation hard SOI technbologies

Detalles Bibliográficos
Autores principales: Barbero, Marlon, Baur, Roland, Gabathuler, Kurt, Horisberger, Roland
Lenguaje:eng
Publicado: 2000
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/687247

Ejemplares similares

Ejemplares similares