Temperature Dependence of the Behaviour of a Single-Sided Irradiated Silicon Detector
We have studied the behaviour of a single-sided, 50 micron pitch, AC-coupled, poly-resistor biased silicon detector, processed at CSEM ( Neuchatel, Switzerland) after having been irradiated with a fluence of 10^13 neutrons/cm2 . The irradiation has been performed simulating the CMS silicon tracker d...
Autores principales: | , , , , , , , , , , , |
---|---|
Lenguaje: | eng |
Publicado: |
1998
|
Materias: | |
Acceso en línea: | http://cds.cern.ch/record/687507 |