Temperature Dependence of the Behaviour of a Single-Sided Irradiated Silicon Detector

We have studied the behaviour of a single-sided, 50 micron pitch, AC-coupled, poly-resistor biased silicon detector, processed at CSEM ( Neuchatel, Switzerland) after having been irradiated with a fluence of 10^13 neutrons/cm2 . The irradiation has been performed simulating the CMS silicon tracker d...

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Detalles Bibliográficos
Autores principales: Babucci, Ezio, Bartalini, Paolo, Bilei, Gian Mario, Bizzaglia, Sauro, Checcucci, Bruno, Dinu, Nicoleta, Lariccia, Paolo, Mantovani, Giancarlo, Postolache, Vasile, Santocchia, Attilio, Servoli, Leonello, Wang, Yefa
Lenguaje:eng
Publicado: 1998
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/687507
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author Babucci, Ezio
Bartalini, Paolo
Bilei, Gian Mario
Bizzaglia, Sauro
Checcucci, Bruno
Dinu, Nicoleta
Lariccia, Paolo
Mantovani, Giancarlo
Postolache, Vasile
Santocchia, Attilio
Servoli, Leonello
Wang, Yefa
author_facet Babucci, Ezio
Bartalini, Paolo
Bilei, Gian Mario
Bizzaglia, Sauro
Checcucci, Bruno
Dinu, Nicoleta
Lariccia, Paolo
Mantovani, Giancarlo
Postolache, Vasile
Santocchia, Attilio
Servoli, Leonello
Wang, Yefa
author_sort Babucci, Ezio
collection CERN
description We have studied the behaviour of a single-sided, 50 micron pitch, AC-coupled, poly-resistor biased silicon detector, processed at CSEM ( Neuchatel, Switzerland) after having been irradiated with a fluence of 10^13 neutrons/cm2 . The irradiation has been performed simulating the CMS silicon tracker data taking environment, with the detectors under bias and the temperature at 0 C. During the july 1996 test beam period we tested the detector at different temperatures ( -10,-5,0,+5,+20 C) as a function of the bias voltage up to 200 V, with the 120 GeV pion beam of X7 area at CERN. On these conditions we measured a S/N ratio of 12-14, efficiency of 98-99 % and a spatial resolution of 11-13 micron.
id cern-687507
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1998
record_format invenio
spelling cern-6875072019-09-30T06:29:59Zhttp://cds.cern.ch/record/687507engBabucci, EzioBartalini, PaoloBilei, Gian MarioBizzaglia, SauroCheccucci, BrunoDinu, NicoletaLariccia, PaoloMantovani, GiancarloPostolache, VasileSantocchia, AttilioServoli, LeonelloWang, YefaTemperature Dependence of the Behaviour of a Single-Sided Irradiated Silicon DetectorDetectors and Experimental TechniquesWe have studied the behaviour of a single-sided, 50 micron pitch, AC-coupled, poly-resistor biased silicon detector, processed at CSEM ( Neuchatel, Switzerland) after having been irradiated with a fluence of 10^13 neutrons/cm2 . The irradiation has been performed simulating the CMS silicon tracker data taking environment, with the detectors under bias and the temperature at 0 C. During the july 1996 test beam period we tested the detector at different temperatures ( -10,-5,0,+5,+20 C) as a function of the bias voltage up to 200 V, with the 120 GeV pion beam of X7 area at CERN. On these conditions we measured a S/N ratio of 12-14, efficiency of 98-99 % and a spatial resolution of 11-13 micron.CMS-NOTE-1998-011oai:cds.cern.ch:6875071998-02-11
spellingShingle Detectors and Experimental Techniques
Babucci, Ezio
Bartalini, Paolo
Bilei, Gian Mario
Bizzaglia, Sauro
Checcucci, Bruno
Dinu, Nicoleta
Lariccia, Paolo
Mantovani, Giancarlo
Postolache, Vasile
Santocchia, Attilio
Servoli, Leonello
Wang, Yefa
Temperature Dependence of the Behaviour of a Single-Sided Irradiated Silicon Detector
title Temperature Dependence of the Behaviour of a Single-Sided Irradiated Silicon Detector
title_full Temperature Dependence of the Behaviour of a Single-Sided Irradiated Silicon Detector
title_fullStr Temperature Dependence of the Behaviour of a Single-Sided Irradiated Silicon Detector
title_full_unstemmed Temperature Dependence of the Behaviour of a Single-Sided Irradiated Silicon Detector
title_short Temperature Dependence of the Behaviour of a Single-Sided Irradiated Silicon Detector
title_sort temperature dependence of the behaviour of a single-sided irradiated silicon detector
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/687507
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