Temperature Dependence of the Behaviour of a Single-Sided Irradiated Silicon Detector

We have studied the behaviour of a single-sided, 50 micron pitch, AC-coupled, poly-resistor biased silicon detector, processed at CSEM ( Neuchatel, Switzerland) after having been irradiated with a fluence of 10^13 neutrons/cm2 . The irradiation has been performed simulating the CMS silicon tracker d...

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Detalles Bibliográficos
Autores principales: Babucci, Ezio, Bartalini, Paolo, Bilei, Gian Mario, Bizzaglia, Sauro, Checcucci, Bruno, Dinu, Nicoleta, Lariccia, Paolo, Mantovani, Giancarlo, Postolache, Vasile, Santocchia, Attilio, Servoli, Leonello, Wang, Yefa
Lenguaje:eng
Publicado: 1998
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/687507

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