Study of Edge Effects in the Breakdown Process of p+ on n-bulk Silicon Diodes

The paper describes the role of the n+ edge implants in the breakdown process of p+ on n-bulk silicon diodes. Laboratory measurements and simulation studies are presented on a series of test structures aimed at an optimisation of the design in the edge region. The dependence of the breakdown voltage...

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Detalles Bibliográficos
Autores principales: Borrello, L, Bozzi, C, Da Rold, M, Dell'Orso, R, Dutta, S, Messineo, A, Mihul, A, Militaru, O, Tonelli, G, Verdini, P G, Wheadon, R, Xie, Z
Lenguaje:eng
Publicado: 1998
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/687584

Internet

http://cds.cern.ch/record/687584

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