Study of Edge Effects in the Breakdown Process of p+ on n-bulk Silicon Diodes

The paper describes the role of the n+ edge implants in the breakdown process of p+ on n-bulk silicon diodes. Laboratory measurements and simulation studies are presented on a series of test structures aimed at an optimisation of the design in the edge region. The dependence of the breakdown voltage...

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Detalles Bibliográficos
Autores principales: Borrello, L, Bozzi, C, Da Rold, M, Dell'Orso, R, Dutta, S, Messineo, A, Mihul, A, Militaru, O, Tonelli, G, Verdini, P G, Wheadon, R, Xie, Z
Lenguaje:eng
Publicado: 1998
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/687584
_version_ 1780901781671247872
author Borrello, L
Bozzi, C
Da Rold, M
Dell'Orso, R
Dutta, S
Messineo, A
Mihul, A
Militaru, O
Tonelli, G
Verdini, P G
Wheadon, R
Xie, Z
author_facet Borrello, L
Bozzi, C
Da Rold, M
Dell'Orso, R
Dutta, S
Messineo, A
Mihul, A
Militaru, O
Tonelli, G
Verdini, P G
Wheadon, R
Xie, Z
author_sort Borrello, L
collection CERN
description The paper describes the role of the n+ edge implants in the breakdown process of p+ on n-bulk silicon diodes. Laboratory measurements and simulation studies are presented on a series of test structures aimed at an optimisation of the design in the edge region. The dependence of the breakdown voltage on the geometrical parameters of the devices is discussed in detail. Design rules are extracted for the use of n-wells along the scribe line to avoid surface conduction of current generated by the exposed edges. The effect of neutron irradiation has been studied up to a fluence 1.8*10^15 n/cm2.
id cern-687584
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1998
record_format invenio
spelling cern-6875842019-09-30T06:29:59Zhttp://cds.cern.ch/record/687584engBorrello, LBozzi, CDa Rold, MDell'Orso, RDutta, SMessineo, AMihul, AMilitaru, OTonelli, GVerdini, P GWheadon, RXie, ZStudy of Edge Effects in the Breakdown Process of p+ on n-bulk Silicon DiodesDetectors and Experimental TechniquesThe paper describes the role of the n+ edge implants in the breakdown process of p+ on n-bulk silicon diodes. Laboratory measurements and simulation studies are presented on a series of test structures aimed at an optimisation of the design in the edge region. The dependence of the breakdown voltage on the geometrical parameters of the devices is discussed in detail. Design rules are extracted for the use of n-wells along the scribe line to avoid surface conduction of current generated by the exposed edges. The effect of neutron irradiation has been studied up to a fluence 1.8*10^15 n/cm2.CMS-CR-1998-014oai:cds.cern.ch:6875841998-07-31
spellingShingle Detectors and Experimental Techniques
Borrello, L
Bozzi, C
Da Rold, M
Dell'Orso, R
Dutta, S
Messineo, A
Mihul, A
Militaru, O
Tonelli, G
Verdini, P G
Wheadon, R
Xie, Z
Study of Edge Effects in the Breakdown Process of p+ on n-bulk Silicon Diodes
title Study of Edge Effects in the Breakdown Process of p+ on n-bulk Silicon Diodes
title_full Study of Edge Effects in the Breakdown Process of p+ on n-bulk Silicon Diodes
title_fullStr Study of Edge Effects in the Breakdown Process of p+ on n-bulk Silicon Diodes
title_full_unstemmed Study of Edge Effects in the Breakdown Process of p+ on n-bulk Silicon Diodes
title_short Study of Edge Effects in the Breakdown Process of p+ on n-bulk Silicon Diodes
title_sort study of edge effects in the breakdown process of p+ on n-bulk silicon diodes
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/687584
work_keys_str_mv AT borrellol studyofedgeeffectsinthebreakdownprocessofponnbulksilicondiodes
AT bozzic studyofedgeeffectsinthebreakdownprocessofponnbulksilicondiodes
AT daroldm studyofedgeeffectsinthebreakdownprocessofponnbulksilicondiodes
AT dellorsor studyofedgeeffectsinthebreakdownprocessofponnbulksilicondiodes
AT duttas studyofedgeeffectsinthebreakdownprocessofponnbulksilicondiodes
AT messineoa studyofedgeeffectsinthebreakdownprocessofponnbulksilicondiodes
AT mihula studyofedgeeffectsinthebreakdownprocessofponnbulksilicondiodes
AT militaruo studyofedgeeffectsinthebreakdownprocessofponnbulksilicondiodes
AT tonellig studyofedgeeffectsinthebreakdownprocessofponnbulksilicondiodes
AT verdinipg studyofedgeeffectsinthebreakdownprocessofponnbulksilicondiodes
AT wheadonr studyofedgeeffectsinthebreakdownprocessofponnbulksilicondiodes
AT xiez studyofedgeeffectsinthebreakdownprocessofponnbulksilicondiodes

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