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A high-speed low-noise transimpedance amplifier in a 025 mum CMOS technology
We present the simulated and measured performance of a transimpedance amplifier designed in a quarter micron CMOS process. Containing only NMOS and PMOS devices, this amplifier can be integrated in any submicron CMOS process. The main feature of this design is the use of a transistor in the feedback...
| Autores principales: | , , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2003
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| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(03)01885-0 http://cds.cern.ch/record/725877 |