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A high-speed low-noise transimpedance amplifier in a 025 mum CMOS technology

We present the simulated and measured performance of a transimpedance amplifier designed in a quarter micron CMOS process. Containing only NMOS and PMOS devices, this amplifier can be integrated in any submicron CMOS process. The main feature of this design is the use of a transistor in the feedback...

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Detalles Bibliográficos
Autores principales:	Anelli, G, Borer, K, Casagrande, L, Despeisse, Matthieu, Jarron, Pierre, Pelloux, Nicolas, Saramad, Shahyar
Lenguaje:	eng
Publicado:	2003
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1016/S0168-9002(03)01885-0 http://cds.cern.ch/record/725877

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