Cargando…
Deep defect levels in standard and oxygen enriched silicon detectors before and after **6**0Co-gamma-irradiation
Capacitance Deep Level Transient Spectroscopy (C-DLTS) measurements have been performed on standard and oxygen-doped silicon detectors manufactured from high-resistivity n-type float zone material with left angle bracket 111 right angle bracket and left angle bracket 100 right angle bracket orientat...
| Autores principales: | , , , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2003
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(03)01884-9 http://cds.cern.ch/record/725878 |