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Deep defect levels in standard and oxygen enriched silicon detectors before and after 60Co-gamma-irradiation

Capacitance Deep Level Transient Spectroscopy (C-DLTS) measurements have been performed on standard and oxygen-doped silicon detectors manufactured from high-resistivity n-type float zone material with left angle bracket 111 right angle bracket and left angle bracket 100 right angle bracket orientat...

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Detalles Bibliográficos
Autores principales:	Stahl, J, Fretwurst, E, Lindström, G, Pintilie, I
Lenguaje:	eng
Publicado:	2003
Materias:	Detectors and Experimental Techniques
Acceso en línea:	https://dx.doi.org/10.1016/S0168-9002(03)01884-9 http://cds.cern.ch/record/725878

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