Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 MeV protons

Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle ra...

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Detalles Bibliográficos
Autores principales: Härkönen, J, Alanko, T, Heikkilä, P, Kallijärvi, S, Laitinen, P, Lassila-Perini, K M, Nummela, S, Nysten, J, Ovchinnikov, V, Palmu, L, Pirojenko, A, Riihimaki, I, Tuominen, E, Tuovinen, E, Ylikoski, M
Lenguaje:eng
Publicado: 2003
Materias:
Health Physics and Radiation Effects
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(03)01880-1
http://cds.cern.ch/record/725879

Internet

https://dx.doi.org/10.1016/S0168-9002(03)01880-1
http://cds.cern.ch/record/725879

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