Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 MeV protons

Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle ra...

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Detalles Bibliográficos
Autores principales: Härkönen, J, Alanko, T, Heikkilä, P, Kallijärvi, S, Laitinen, P, Lassila-Perini, K M, Nummela, S, Nysten, J, Ovchinnikov, V, Palmu, L, Pirojenko, A, Riihimaki, I, Tuominen, E, Tuovinen, E, Ylikoski, M
Lenguaje:eng
Publicado: 2003
Materias:
Health Physics and Radiation Effects
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(03)01880-1
http://cds.cern.ch/record/725879
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author Härkönen, J
Alanko, T
Heikkilä, P
Kallijärvi, S
Laitinen, P
Lassila-Perini, K M
Nummela, S
Nysten, J
Ovchinnikov, V
Palmu, L
Pirojenko, A
Riihimaki, I
Tuominen, E
Tuovinen, E
Ylikoski, M
author_facet Härkönen, J
Alanko, T
Heikkilä, P
Kallijärvi, S
Laitinen, P
Lassila-Perini, K M
Nummela, S
Nysten, J
Ovchinnikov, V
Palmu, L
Pirojenko, A
Riihimaki, I
Tuominen, E
Tuovinen, E
Ylikoski, M
author_sort Härkönen, J
collection CERN
description Introducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle radiation, the samples were heat treated at elevated temperatures. In this way, the long-term stability of silicon detectors in hostile radiation environment could be estimated. Current-voltage measurements and Surface Photovoltage (SPV) method were used to characterize the samples.
id cern-725879
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2003
record_format invenio
spelling cern-7258792019-09-30T06:29:59Zdoi:10.1016/S0168-9002(03)01880-1http://cds.cern.ch/record/725879engHärkönen, JAlanko, THeikkilä, PKallijärvi, SLaitinen, PLassila-Perini, K MNummela, SNysten, JOvchinnikov, VPalmu, LPirojenko, ARiihimaki, ITuominen, ETuovinen, EYlikoski, MAnnealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 MeV protonsHealth Physics and Radiation EffectsIntroducing oxygen into the silicon material is believed to improve the radiation hardness of silicon detectors. In this study, oxygenated and non-oxygenated silicon samples were processed and irradiated with 15 MeV protons. In order to speed up the defect reactions after the exposure to particle radiation, the samples were heat treated at elevated temperatures. In this way, the long-term stability of silicon detectors in hostile radiation environment could be estimated. Current-voltage measurements and Surface Photovoltage (SPV) method were used to characterize the samples.oai:cds.cern.ch:7258792003
spellingShingle Health Physics and Radiation Effects
Härkönen, J
Alanko, T
Heikkilä, P
Kallijärvi, S
Laitinen, P
Lassila-Perini, K M
Nummela, S
Nysten, J
Ovchinnikov, V
Palmu, L
Pirojenko, A
Riihimaki, I
Tuominen, E
Tuovinen, E
Ylikoski, M
Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 MeV protons
title Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 MeV protons
title_full Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 MeV protons
title_fullStr Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 MeV protons
title_full_unstemmed Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 MeV protons
title_short Annealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 MeV protons
title_sort annealing study of oxygenated and non-oxygenated float zone silicon irradiated with 15 mev protons
topic Health Physics and Radiation Effects
url https://dx.doi.org/10.1016/S0168-9002(03)01880-1
http://cds.cern.ch/record/725879
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