Modeling of an integrated active feedback preamplifier in a 025 mu m CMOS technology at cryogenic temperatures

This paper describes the modeling of a standard 0.25 mu m CMOS technology at cryogenic temperatures. In the first step of the work, the parameters of the EKV v2.6 model were extracted at different temperatures (300, 150, and 70 K). The extracted parameters were then used to optimize the performance...

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Detalles Bibliográficos
Autores principales: Saramad, Shahyar, Anelli, G, Bucher, M, Despeisse, Matthieu, Jarron, Pierre, Pelloux, Nicolas, Rivetti, A
Lenguaje:eng
Publicado: 2003
Materias:
Nuclear Physics
Acceso en línea:https://dx.doi.org/10.1109/TNS.2003.818236
http://cds.cern.ch/record/725976

Internet

https://dx.doi.org/10.1109/TNS.2003.818236
http://cds.cern.ch/record/725976

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