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Simulation of signal in irradiated silicon pixel detectors

Induced currents in silicon pixel detectors of different geometries were simulated. The general properties of charge collection in irradiated segmented devices were investigated. A significant difference in charge collection efficiency (CCE) between n**+-n and p **+-n detectors was predicted after i...

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Detalles Bibliográficos
Autores principales: Kramberger, G, Contardo, D
Lenguaje:eng
Publicado: 2003
Materias:
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(03)01756-X
http://cds.cern.ch/record/726083