Simulation of signal in irradiated silicon pixel detectors

Induced currents in silicon pixel detectors of different geometries were simulated. The general properties of charge collection in irradiated segmented devices were investigated. A significant difference in charge collection efficiency (CCE) between n**+-n and p **+-n detectors was predicted after i...

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Detalles Bibliográficos
Autores principales: Kramberger, G, Contardo, D
Lenguaje:eng
Publicado: 2003
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(03)01756-X
http://cds.cern.ch/record/726083
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author Kramberger, G
Contardo, D
author_facet Kramberger, G
Contardo, D
author_sort Kramberger, G
collection CERN
description Induced currents in silicon pixel detectors of different geometries were simulated. The general properties of charge collection in irradiated segmented devices were investigated. A significant difference in charge collection efficiency (CCE) between n**+-n and p **+-n detectors was predicted after irradiation to the LHC fluences. A possible use of silicon detectors for the LHC upgrade was investigated by simulation of thin pixel sensors. The reduced CCE due to charge trapping seems to be the largest obstacle for their use.
id cern-726083
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2003
record_format invenio
spelling cern-7260832019-09-30T06:29:59Zdoi:10.1016/S0168-9002(03)01756-Xhttp://cds.cern.ch/record/726083engKramberger, GContardo, DSimulation of signal in irradiated silicon pixel detectorsDetectors and Experimental TechniquesInduced currents in silicon pixel detectors of different geometries were simulated. The general properties of charge collection in irradiated segmented devices were investigated. A significant difference in charge collection efficiency (CCE) between n**+-n and p **+-n detectors was predicted after irradiation to the LHC fluences. A possible use of silicon detectors for the LHC upgrade was investigated by simulation of thin pixel sensors. The reduced CCE due to charge trapping seems to be the largest obstacle for their use.oai:cds.cern.ch:7260832003
spellingShingle Detectors and Experimental Techniques
Kramberger, G
Contardo, D
Simulation of signal in irradiated silicon pixel detectors
title Simulation of signal in irradiated silicon pixel detectors
title_full Simulation of signal in irradiated silicon pixel detectors
title_fullStr Simulation of signal in irradiated silicon pixel detectors
title_full_unstemmed Simulation of signal in irradiated silicon pixel detectors
title_short Simulation of signal in irradiated silicon pixel detectors
title_sort simulation of signal in irradiated silicon pixel detectors
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/S0168-9002(03)01756-X
http://cds.cern.ch/record/726083
work_keys_str_mv AT krambergerg simulationofsignalinirradiatedsiliconpixeldetectors
AT contardod simulationofsignalinirradiatedsiliconpixeldetectors

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