Cargando…
Simulation of signal in irradiated silicon pixel detectors
Induced currents in silicon pixel detectors of different geometries were simulated. The general properties of charge collection in irradiated segmented devices were investigated. A significant difference in charge collection efficiency (CCE) between n**+-n and p **+-n detectors was predicted after i...
| Autores principales: | , |
|---|---|
| Lenguaje: | eng |
| Publicado: |
2003
|
| Materias: | |
| Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(03)01756-X http://cds.cern.ch/record/726083 |