Results of irradiation tests on standard planar silicon detectors with 7-10 MeV protons

Standard planar silicon detectors of 2 k OMEGA cm resistivity were irradiated with 7-10 MeV protons up to fluences of 7x10 sup 1 sup 3 p/cm sup 2. The effects of proton irradiation on the effective doping concentration (N sub e sub f sub f) and leakage current (I sub v sub o sub l) as a function of...

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Detalles Bibliográficos
Autores principales: Bechevet, D, Glaser, M, Houdayer, A, Lebel, C, Leroy, C, Moll, Michael, Roy, P
Lenguaje:eng
Publicado: 2002
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/772351

Internet

http://cds.cern.ch/record/772351

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