Results of irradiation tests on standard planar silicon detectors with 7-10 MeV protons

Standard planar silicon detectors of 2 k OMEGA cm resistivity were irradiated with 7-10 MeV protons up to fluences of 7x10 sup 1 sup 3 p/cm sup 2. The effects of proton irradiation on the effective doping concentration (N sub e sub f sub f) and leakage current (I sub v sub o sub l) as a function of fluence were investigated. The evolution of N sub e sub f sub f and I sub v sub o sub l as a function of time after irradiation was obtained by heating the detectors to accelerate their ageing. Comparison is done with detectors of the same type irradiated with 24 GeV/c protons. The hardness factors for 7-10 MeV protons are extracted.