Results of irradiation tests on standard planar silicon detectors with 7-10 MeV protons

Standard planar silicon detectors of 2 k OMEGA cm resistivity were irradiated with 7-10 MeV protons up to fluences of 7x10 sup 1 sup 3 p/cm sup 2. The effects of proton irradiation on the effective doping concentration (N sub e sub f sub f) and leakage current (I sub v sub o sub l) as a function of...

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Detalles Bibliográficos
Autores principales: Bechevet, D, Glaser, M, Houdayer, A, Lebel, C, Leroy, C, Moll, Michael, Roy, P
Lenguaje:eng
Publicado: 2002
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/772351
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author Bechevet, D
Glaser, M
Houdayer, A
Lebel, C
Leroy, C
Moll, Michael
Roy, P
author_facet Bechevet, D
Glaser, M
Houdayer, A
Lebel, C
Leroy, C
Moll, Michael
Roy, P
author_sort Bechevet, D
collection CERN
description Standard planar silicon detectors of 2 k OMEGA cm resistivity were irradiated with 7-10 MeV protons up to fluences of 7x10 sup 1 sup 3 p/cm sup 2. The effects of proton irradiation on the effective doping concentration (N sub e sub f sub f) and leakage current (I sub v sub o sub l) as a function of fluence were investigated. The evolution of N sub e sub f sub f and I sub v sub o sub l as a function of time after irradiation was obtained by heating the detectors to accelerate their ageing. Comparison is done with detectors of the same type irradiated with 24 GeV/c protons. The hardness factors for 7-10 MeV protons are extracted.
id cern-772351
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2002
record_format invenio
spelling cern-7723512019-09-30T06:29:59Zhttp://cds.cern.ch/record/772351engBechevet, DGlaser, MHoudayer, ALebel, CLeroy, CMoll, MichaelRoy, PResults of irradiation tests on standard planar silicon detectors with 7-10 MeV protonsDetectors and Experimental TechniquesStandard planar silicon detectors of 2 k OMEGA cm resistivity were irradiated with 7-10 MeV protons up to fluences of 7x10 sup 1 sup 3 p/cm sup 2. The effects of proton irradiation on the effective doping concentration (N sub e sub f sub f) and leakage current (I sub v sub o sub l) as a function of fluence were investigated. The evolution of N sub e sub f sub f and I sub v sub o sub l as a function of time after irradiation was obtained by heating the detectors to accelerate their ageing. Comparison is done with detectors of the same type irradiated with 24 GeV/c protons. The hardness factors for 7-10 MeV protons are extracted.oai:cds.cern.ch:7723512002
spellingShingle Detectors and Experimental Techniques
Bechevet, D
Glaser, M
Houdayer, A
Lebel, C
Leroy, C
Moll, Michael
Roy, P
Results of irradiation tests on standard planar silicon detectors with 7-10 MeV protons
title Results of irradiation tests on standard planar silicon detectors with 7-10 MeV protons
title_full Results of irradiation tests on standard planar silicon detectors with 7-10 MeV protons
title_fullStr Results of irradiation tests on standard planar silicon detectors with 7-10 MeV protons
title_full_unstemmed Results of irradiation tests on standard planar silicon detectors with 7-10 MeV protons
title_short Results of irradiation tests on standard planar silicon detectors with 7-10 MeV protons
title_sort results of irradiation tests on standard planar silicon detectors with 7-10 mev protons
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/772351
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AT houdayera resultsofirradiationtestsonstandardplanarsilicondetectorswith710mevprotons
AT lebelc resultsofirradiationtestsonstandardplanarsilicondetectorswith710mevprotons
AT leroyc resultsofirradiationtestsonstandardplanarsilicondetectorswith710mevprotons
AT mollmichael resultsofirradiationtestsonstandardplanarsilicondetectorswith710mevprotons
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