Observation of radiation induced latchup in the readout electronics of NA50 multiplicity detector

During the data taking of the NA50 experiment, the CMOS digital pipeline chips (CDP) used for the readout of the multiplicity detector were exposed to high levels of radiation resulting in an ionizing radiation dose of more than 200 krad and displacement damage equivalent to 1 MeV neutron fluence of...

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Detalles Bibliográficos
Autores principales: Alessandro, B, Bonazzola, G C, Crescio, E, De Witt, J, Giubellino, P, Idzik, M, Marzari-Chiesa, A, Masera, M, Rato-Mendes, P, Prino, F, Ramello, L, Riccati, L, Sitta, M
Lenguaje:eng
Publicado: 2002
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/S0168-9002(01)01672-2
http://cds.cern.ch/record/772472

Internet

https://dx.doi.org/10.1016/S0168-9002(01)01672-2
http://cds.cern.ch/record/772472

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