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Observation of radiation induced latchup in the readout electronics of NA50 multiplicity detector
During the data taking of the NA50 experiment, the CMOS digital pipeline chips (CDP) used for the readout of the multiplicity detector were exposed to high levels of radiation resulting in an ionizing radiation dose of more than 200 krad and displacement damage equivalent to 1 MeV neutron fluence of...
Autores principales: | Alessandro, B, Bonazzola, G C, Crescio, E, De Witt, J, Giubellino, P, Idzik, M, Marzari-Chiesa, A, Masera, M, Rato-Mendes, P, Prino, F, Ramello, L, Riccati, L, Sitta, M |
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Lenguaje: | eng |
Publicado: |
2002
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Materias: | |
Acceso en línea: | https://dx.doi.org/10.1016/S0168-9002(01)01672-2 http://cds.cern.ch/record/772472 |
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