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Radiation hard detectors from silicon enriched with both oxygen and thermal donors: improvements in donor removal and long-term stability with regard to neutron irradiation
Detectors made on the silicon wafers with high concentration of thermal donors (TD), which were introduced during the high temperature long time (HTLT) oxygenation procedure, have been investigated in the study of radiation hardness with regard to neutron irradiation and donor removal problems in ir...
| Autores principales: | , , , , , |
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| Lenguaje: | eng |
| Publicado: |
2002
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| Materias: | |
| Acceso en línea: | http://cds.cern.ch/record/772487 |