Response of the APV readout chip to laser-simulated, highly ionizing interactions

Heavily Ionizing Particles are know to cause sizable dead-time in the front end APV chip of the CMS Silicon Strip Tracker. To better understand this behavior, the effects of Highly Ionizing Particles in the CMS Silicon Strip Tracker were simulated using a 1060 nm laser. Calibrated laser pulses allow...

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Detalles Bibliográficos
Autores principales: Bernardini, Jacopo, Gennai, Simone, Grabit, Robert, Mirabito, Laurent
Lenguaje:eng
Publicado: 2004
Materias:
Detectors and Experimental Techniques
Acceso en línea:http://cds.cern.ch/record/801155
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author Bernardini, Jacopo
Gennai, Simone
Grabit, Robert
Mirabito, Laurent
author_facet Bernardini, Jacopo
Gennai, Simone
Grabit, Robert
Mirabito, Laurent
author_sort Bernardini, Jacopo
collection CERN
description Heavily Ionizing Particles are know to cause sizable dead-time in the front end APV chip of the CMS Silicon Strip Tracker. To better understand this behavior, the effects of Highly Ionizing Particles in the CMS Silicon Strip Tracker were simulated using a 1060 nm laser. Calibrated laser pulses allow one to determine the energy threshold at which the dead-time becomes significant as well as the time evolution of the chip response. Various APV settings and supply line resistor values were investigated. Results agree with test beam data as well as previous laboratory measurements in confirming that settings can be found for which the dead-time is as low as 100ns for up to 50 MeV deposited energy.
id cern-801155
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2004
record_format invenio
spelling cern-8011552019-09-30T06:29:59Zhttp://cds.cern.ch/record/801155engBernardini, JacopoGennai, SimoneGrabit, RobertMirabito, LaurentResponse of the APV readout chip to laser-simulated, highly ionizing interactionsDetectors and Experimental TechniquesHeavily Ionizing Particles are know to cause sizable dead-time in the front end APV chip of the CMS Silicon Strip Tracker. To better understand this behavior, the effects of Highly Ionizing Particles in the CMS Silicon Strip Tracker were simulated using a 1060 nm laser. Calibrated laser pulses allow one to determine the energy threshold at which the dead-time becomes significant as well as the time evolution of the chip response. Various APV settings and supply line resistor values were investigated. Results agree with test beam data as well as previous laboratory measurements in confirming that settings can be found for which the dead-time is as low as 100ns for up to 50 MeV deposited energy.CMS-NOTE-2004-022oai:cds.cern.ch:8011552004-09-24
spellingShingle Detectors and Experimental Techniques
Bernardini, Jacopo
Gennai, Simone
Grabit, Robert
Mirabito, Laurent
Response of the APV readout chip to laser-simulated, highly ionizing interactions
title Response of the APV readout chip to laser-simulated, highly ionizing interactions
title_full Response of the APV readout chip to laser-simulated, highly ionizing interactions
title_fullStr Response of the APV readout chip to laser-simulated, highly ionizing interactions
title_full_unstemmed Response of the APV readout chip to laser-simulated, highly ionizing interactions
title_short Response of the APV readout chip to laser-simulated, highly ionizing interactions
title_sort response of the apv readout chip to laser-simulated, highly ionizing interactions
topic Detectors and Experimental Techniques
url http://cds.cern.ch/record/801155
work_keys_str_mv AT bernardinijacopo responseoftheapvreadoutchiptolasersimulatedhighlyionizinginteractions
AT gennaisimone responseoftheapvreadoutchiptolasersimulatedhighlyionizinginteractions
AT grabitrobert responseoftheapvreadoutchiptolasersimulatedhighlyionizinginteractions
AT mirabitolaurent responseoftheapvreadoutchiptolasersimulatedhighlyionizinginteractions

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