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Measurement of trapping time constants in irradiated DOFZ silicon with test beam data
A method has been developed to measure the trapping time constants in irradiated materials with test beam data. The measurements have been performed on ATLAS pixel detectors irradiated with protons to a fluence of 1.1 * 10/sup 15/ n/sub eq/ cm/sup -2/. Different defect annealing scenarios have been...
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| Lenguaje: | eng |
| Publicado: |
2004
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| Acceso en línea: | https://dx.doi.org/10.1016/j.nima.2003.11.019 http://cds.cern.ch/record/802348 |