Measurement of trapping time constants in irradiated DOFZ silicon with test beam data

A method has been developed to measure the trapping time constants in irradiated materials with test beam data. The measurements have been performed on ATLAS pixel detectors irradiated with protons to a fluence of 1.1 * 10/sup 15/ n/sub eq/ cm/sup -2/. Different defect annealing scenarios have been...

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Autor principal: Lari, T
Lenguaje:eng
Publicado: 2004
Materias:
Detectors and Experimental Techniques
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2003.11.019
http://cds.cern.ch/record/802348
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author Lari, T
author_facet Lari, T
author_sort Lari, T
collection CERN
description A method has been developed to measure the trapping time constants in irradiated materials with test beam data. The measurements have been performed on ATLAS pixel detectors irradiated with protons to a fluence of 1.1 * 10/sup 15/ n/sub eq/ cm/sup -2/. Different defect annealing scenarios have been investigated. The trapping probability has been observed to be smaller after 25 h of annealing at 60 degrees C than after beneficial annealing only.
id cern-802348
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 2004
record_format invenio
spelling cern-8023482019-09-30T06:29:59Zdoi:10.1016/j.nima.2003.11.019http://cds.cern.ch/record/802348engLari, TMeasurement of trapping time constants in irradiated DOFZ silicon with test beam dataDetectors and Experimental TechniquesA method has been developed to measure the trapping time constants in irradiated materials with test beam data. The measurements have been performed on ATLAS pixel detectors irradiated with protons to a fluence of 1.1 * 10/sup 15/ n/sub eq/ cm/sup -2/. Different defect annealing scenarios have been investigated. The trapping probability has been observed to be smaller after 25 h of annealing at 60 degrees C than after beneficial annealing only.oai:cds.cern.ch:8023482004
spellingShingle Detectors and Experimental Techniques
Lari, T
Measurement of trapping time constants in irradiated DOFZ silicon with test beam data
title Measurement of trapping time constants in irradiated DOFZ silicon with test beam data
title_full Measurement of trapping time constants in irradiated DOFZ silicon with test beam data
title_fullStr Measurement of trapping time constants in irradiated DOFZ silicon with test beam data
title_full_unstemmed Measurement of trapping time constants in irradiated DOFZ silicon with test beam data
title_short Measurement of trapping time constants in irradiated DOFZ silicon with test beam data
title_sort measurement of trapping time constants in irradiated dofz silicon with test beam data
topic Detectors and Experimental Techniques
url https://dx.doi.org/10.1016/j.nima.2003.11.019
http://cds.cern.ch/record/802348
work_keys_str_mv AT larit measurementoftrappingtimeconstantsinirradiateddofzsiliconwithtestbeamdata

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