A double junction model of irradiated silicon pixel sensors for LHC

In this paper we discuss the measurement of charge collection in irradiated silicon pixel sensors and the comparison with a detailed simulation. The simulation implements a model of radiation damage by including two defect levels with opposite charge states and trapping of charge carriers. The model...

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Detalles Bibliográficos
Autores principales: Chiochia, V., Swartz, M., Allkofer, Y., Bortoletto, D., Cremaldi, L., Cucciarelli, S., Dorokhov, A., Hörmann, C., Kim, D., Konecki, M., Kotlinski, D., Prokofiev, K., Regenfus, C., Rohe, T., Sanders, D.A., Son, S., Speer, T.
Lenguaje:eng
Publicado: 2005
Materias:
Other Fields of Physics
Acceso en línea:https://dx.doi.org/10.1016/j.nima.2006.05.199
http://cds.cern.ch/record/848775

Internet

https://dx.doi.org/10.1016/j.nima.2006.05.199
http://cds.cern.ch/record/848775

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