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Mossbauer study of /sup 119/Sn defects in silicon from ion implantations of radioactive /sup 119/In
Radioactive /sup 119/In/sup +/ ions (T/sub 1/2/=2.1 min) obtained from the ISOLDE facility at CERN have been implanted into silicon single crystals at room temperature. Mossbauer emission spectra from the 24 keV Gamma -radiation of the daughter /sup 119/Sn have been measured by fast resonance-counti...
Autores principales: | , , , |
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Lenguaje: | eng |
Publicado: |
1980
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Materias: | |
Acceso en línea: | http://cds.cern.ch/record/879353 |