Mossbauer study of /sup 119/Sn defects in silicon from ion implantations of radioactive /sup 119/In

Radioactive /sup 119/In/sup +/ ions (T/sub 1/2/=2.1 min) obtained from the ISOLDE facility at CERN have been implanted into silicon single crystals at room temperature. Mossbauer emission spectra from the 24 keV Gamma -radiation of the daughter /sup 119/Sn have been measured by fast resonance-counti...

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Detalles Bibliográficos
Autores principales: Weyer, G, Damgaard, S, Heinemeier, J, Petersen, J W
Lenguaje:eng
Publicado: 1980
Materias:
Condensed Matter
Acceso en línea:http://cds.cern.ch/record/879353

Internet

http://cds.cern.ch/record/879353

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