Mossbauer study of /sup 119/Sn defects in silicon from ion implantations of radioactive /sup 119/In

Radioactive /sup 119/In/sup +/ ions (T/sub 1/2/=2.1 min) obtained from the ISOLDE facility at CERN have been implanted into silicon single crystals at room temperature. Mossbauer emission spectra from the 24 keV Gamma -radiation of the daughter /sup 119/Sn have been measured by fast resonance-counting technique. Five independent lines, characterized by their hyperfine parameters and Debye temperatures, have been found in the spectra. From the bonding configurations, deduced for the Sn-impurity atoms, these are concluded to be located in four different defects in the silicon lattice. Simple models are proposed for the defects. (9 refs).