Mossbauer study of /sup 119/Sn defects in silicon from ion implantations of radioactive /sup 119/In

Radioactive /sup 119/In/sup +/ ions (T/sub 1/2/=2.1 min) obtained from the ISOLDE facility at CERN have been implanted into silicon single crystals at room temperature. Mossbauer emission spectra from the 24 keV Gamma -radiation of the daughter /sup 119/Sn have been measured by fast resonance-counti...

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Detalles Bibliográficos
Autores principales: Weyer, G, Damgaard, S, Heinemeier, J, Petersen, J W
Lenguaje:eng
Publicado: 1980
Materias:
Condensed Matter
Acceso en línea:http://cds.cern.ch/record/879353
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author Weyer, G
Damgaard, S
Heinemeier, J
Petersen, J W
author_facet Weyer, G
Damgaard, S
Heinemeier, J
Petersen, J W
author_sort Weyer, G
collection CERN
description Radioactive /sup 119/In/sup +/ ions (T/sub 1/2/=2.1 min) obtained from the ISOLDE facility at CERN have been implanted into silicon single crystals at room temperature. Mossbauer emission spectra from the 24 keV Gamma -radiation of the daughter /sup 119/Sn have been measured by fast resonance-counting technique. Five independent lines, characterized by their hyperfine parameters and Debye temperatures, have been found in the spectra. From the bonding configurations, deduced for the Sn-impurity atoms, these are concluded to be located in four different defects in the silicon lattice. Simple models are proposed for the defects. (9 refs).
id cern-879353
institution Organización Europea para la Investigación Nuclear
language eng
publishDate 1980
record_format invenio
spelling cern-8793532019-09-30T06:29:59Zhttp://cds.cern.ch/record/879353engWeyer, GDamgaard, SHeinemeier, JPetersen, J WMossbauer study of /sup 119/Sn defects in silicon from ion implantations of radioactive /sup 119/InCondensed MatterRadioactive /sup 119/In/sup +/ ions (T/sub 1/2/=2.1 min) obtained from the ISOLDE facility at CERN have been implanted into silicon single crystals at room temperature. Mossbauer emission spectra from the 24 keV Gamma -radiation of the daughter /sup 119/Sn have been measured by fast resonance-counting technique. Five independent lines, characterized by their hyperfine parameters and Debye temperatures, have been found in the spectra. From the bonding configurations, deduced for the Sn-impurity atoms, these are concluded to be located in four different defects in the silicon lattice. Simple models are proposed for the defects. (9 refs).oai:cds.cern.ch:8793531980
spellingShingle Condensed Matter
Weyer, G
Damgaard, S
Heinemeier, J
Petersen, J W
Mossbauer study of /sup 119/Sn defects in silicon from ion implantations of radioactive /sup 119/In
title Mossbauer study of /sup 119/Sn defects in silicon from ion implantations of radioactive /sup 119/In
title_full Mossbauer study of /sup 119/Sn defects in silicon from ion implantations of radioactive /sup 119/In
title_fullStr Mossbauer study of /sup 119/Sn defects in silicon from ion implantations of radioactive /sup 119/In
title_full_unstemmed Mossbauer study of /sup 119/Sn defects in silicon from ion implantations of radioactive /sup 119/In
title_short Mossbauer study of /sup 119/Sn defects in silicon from ion implantations of radioactive /sup 119/In
title_sort mossbauer study of /sup 119/sn defects in silicon from ion implantations of radioactive /sup 119/in
topic Condensed Matter
url http://cds.cern.ch/record/879353
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AT damgaards mossbauerstudyofsup119sndefectsinsiliconfromionimplantationsofradioactivesup119in
AT heinemeierj mossbauerstudyofsup119sndefectsinsiliconfromionimplantationsofradioactivesup119in
AT petersenjw mossbauerstudyofsup119sndefectsinsiliconfromionimplantationsofradioactivesup119in

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